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PROFET(R) Data Sheet BTS 443 P
Smart Highside Power Switch
* Reverse battery protection by self turn on of power MOSFET
Reversave
Features
* Short circuit protection * Current limitation * Overload protection * Thermal shutdown TO-252-5-1 * Overvoltage protection (including load dump) * Loss of ground protection * Loss of Vbb protection (with external diode for charged inductive loads) * Very low standby current * Fast demagnetisation of inductive loads * Electrostatic discharge (ESD) protection * Optimized static electromagnetic compatibility (EMC)
Product Summary Operating voltage On-state resistance Load current (ISO) Current limitation Package
Vbb(on) RON IL(ISO) IL(SCr)
5.0 ... 36
V
16 m 25 A 65 A
Diagnostic Function Application
* Proportional load current sense (with defined fault signal during thermal shutdown) * Power switch with current sense diagnostic feedback for 12V and 24 V DC grounded loads * All types of resistive, capacitive and inductive loads (no PWM with inductive loads) * Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
3 & Tab
Voltage source Overvoltage protection Current limit Gate protection
OUT R bb + V bb
1, 5
IL
Voltage sensor
Charge pump Level shifter Rectifier
Limit for unclamped ind. loads Output Voltage detection
Current Sense Load
2
IN
ESD
Logic
I IN
Temperature sensor I IS
IS
PROFET
Load GND
VIN V IS
Logic GND
4
R IS
Infineon Technologies AG
Page 1 of 13
2003-Oct-01
Data Sheet BTS 443 P
Pin 1 2 Tab/(3) 4 5 Symbol OUT IN Vbb IS OUT O I + S O Function
Output to the load. The pin 1 and 5 must be shorted with each other especially in high current applications!*) Input, activates the power switch in case of short to ground Positive power supply voltage, the tab is shorted to this pin. Diagnostic feedback providing a sense current proportional to the load current; high current on failure (see Truth Table on page 6) Output to the load. The pin 1 and 5 must be shorted with each other especially in high current applications!*) *) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy
Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection (see also diagram on page 9) Tj=-40...150 C: Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 , RL= 2.7 , td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC) TC 25C Inductive load switch-off energy dissipation, single pulse U=12V, I=10A, L=3mH Tj=150 C: Electrostatic discharge capability (ESD) (Human Body Model) acc. ESD assn. std. S5.1-1993; R=1.5k; C=100pF Current through input pin (DC) Current through current sense pin (DC)
see internal circuit diagrams page 7
Symbol Vbb Vbb VLoad dump2) IL Tj Tstg Ptot EAS VESD IIN IIS
Values 36 241) 60 self-limited -40 ...+150 -55 ...+150 42 0.15 4.0 +15, -100 +15, -100
Unit V V V A C W J kV mA
1) 2)
Short circuit is tested with 100m and 20H VLoad dump is set-up without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Infineon Technologies AG
Page 2 of 13
2003-Oct-01
Data Sheet BTS 443 P Thermal Characteristics
Parameter and Conditions Thermal resistance Symbol min ---chip - case: RthJC3) junction - ambient (free air): RthJA SMD version, device on PCB4): Values typ max -1.5 80 -45 -Unit K/W
Electrical Characteristics
Parameter and Conditions
at Tj= -40C...150C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Load Switching Capabilities and Characteristics On-state resistance (pin 3 to pin 1,5) VIN= 0, IL = 5 A Tj=25 C: RON VON(NL) --13 25 50 16 31 -m mV A IL(ISO) IL(nom) ton toff dV /dton -dV/dtoff 21 6.2 150 70 0.1 0.1 25 7.6 ------410 410 1 1 s Tj=150 C: Output voltage drop limitation at small load currents (Tab to pin 1,5) Tj=-40...150 C: Nominal load current (Tab to pin 1,5) ISO Proposal: TC=85C, VON0.5V, Tj150C SMD 4): TA=85C, VON0.5V, Tj150C Turn-on time IIN to 90% VOUT: Turn-off time IIN to 10% VOUT: RL = 2,5, Tj=-40...150 C Slew rate on 10 to 30% VOUT, RL = 2.5 , Tj=-40...150 C Slew rate off 70 to 40% VOUT, RL = 2.5 , Tj=-40...150 C
V/s V/s
3) 4)
Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included! Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air.
Infineon Technologies AG
Page 3 of 13
2003-Oct-01
Data Sheet BTS 443 P
Parameter and Conditions
at Tj= -40C...150C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Operating Parameters Operating voltage (VIN=0V) Undervoltage shutdown 5) Undervoltage restart of charge pump (VIN=0V) Overvoltage protection 6) Ibb=15 mA Standby current IIN=0
Vbb(on) VbIN(u) Vbb(ucp) VZ,IN
5.0 1.5 3.0 61 ---
-3.0 4.5 68 2 4
36 4.5 6.0 -5 8
V V V V A
Tj=-40...+25C: Ibb(off) Tj=150C:
Protection Functions 7) Short circuit current limit (Tab to pin 1,5) VON=8V, time until limitation max. 300s Tj =-40C: Tj =25C: =+150C: Tj Repetitive short circuit current limit, Tj = Tjt Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) (e.g. overvoltage) IL= 40 mA 8) Thermal overload trip temperature Thermal hysteresis Reverse Battery Reverse battery voltage On-state resistance (pin 1,5 to pin 3)
IL(SC) IL(SCr) VON(CL) Tjt
35 35 35 -38 150 --
75 65 65 65 42 -10
110 110 125 -48 ---
A A V C K
Tjt
-Vbb
-----
--16 25 200
20 22 19 32 --
V m
Vbb= - 8V, VIN= 0, IL = -5 A, RIS = 1 k, Tj=25 C: RON(rev) Vbb= -12V, VIN= 0, IL = -5 A, RIS = 1 k, Tj=25 C: Tj=150 C: Integrated resistor in Vbb line Rbb
5) 6) 7)
8)
VbIN=Vbb-VIN see diagram on page 11. see also VON(CL) in circuit diagram on page 7. Integrated protection functions are designed to prevent IC destruction under fault condition described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not for continuous repetitive operation. see also page 12.
Infineon Technologies AG
Page 4 of 13
2003-Oct-01
Data Sheet BTS 443 P
Diagnostic Characteristics Current sense ratio, static on-condition kILIS = IL : IIS VON<1.5 V, VIS4.5 V 9) IL = 20A, Tj = -40C: Tj = +25C: Tj = +150C: IL = 5A, Tj = -40C: Tj = +25C: Tj = +150C: IL = 2.5A, Tj = -40C: Tj = +25C: Tj = +150C: IL = 1A, Tj = -40C: Tj = +25C: Tj = +150C: IIN = 0 (e.g. during de-energising of inductive loads): Sense current under fault conditions; VDS>1.5V, typ. Tj= -40...+150C: IIS,fault Fault-Sense signal delay after negative input slope tdelay(fault) Current sense leakage current IIN = 0: IIS(LL) VIN = 0, IL = 0: IIS(LH) Current sense settling time to IIS static10% after tson(IS) 20 A 10) positive input slope, IL = 0 Tj= -40...+150C: Overvoltage protection Tj = -40...+150C: VbIS(Z) Ibb = 15 mA Input Required current capability of input switch IIN(on) Tj =-40..+150C: Maximum input current for turn-off Tj =-40..+150C: IIN(off) ----4 -0.5 12 400 s A
kILIS
--
8200
--
7400 7500 7500 6800 7200 7200 6800 6800 6800 6800 6800 6800 -2.5
8300 8300 8200 8300 8300 8200 8500 8500 8100 8600 8600 8600 n.a. 4
9100 9100 8800 9700 9300 9000 10000 9800 9200 10500 10500 10500 --0.8 mA ms
61
68
--
V
---
0.7 --
1.2 50
mA A
9)
If VON is higher, the sense current is no longer proportional to the load current due to sense current saturation. 10) not subject to production test, specified by design
Infineon Technologies AG
Page 5 of 13
2003-Oct-01
Data Sheet BTS 443 P Truth Table
Input Current level L H L H L H L H L H L H Output level L H L H L L L L H H Z H Current Sense IIS 0 nominal 0 IISfault 0 IISfault 0 IISfault 0 Normal operation Overload Short circuit to GND Overtemperature Short circuit to Vbb Open load
L = "Low" Level H = "High" Level
Z = high impedance, potential depends on external circuit
Terms
I bb VbIN 3 Vbb I V bb RIN V
IN
VON L OUT
2
IN PROFET IS
1,5
I
VbIS
IN
4
I IS DS V
OUT
V
IS
R IS
Two or more devices can easily be connected in parallel to increase load current capability.
11)
Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.
Infineon Technologies AG
Page 6 of 13
2003-Oct-01
Data Sheet BTS 443 P
Input circuit (ESD protection)
V bb
Inductive and overvoltage output clamp
+ Vbb VZ1 V
ON
V V bIN
ZD
R bb
Z,IN
IN I
OUT
PROFET
IN
VON is clamped to VON(Cl) = 42 V typ.
V IN
ESD-Zener diode: 68 V typ., max 15 mA;
Current sense output
Normal operation
Vbb Rbb IIS,fault IIS R
IS
Overvoltage protection of logic part
+ Vbb
ZD
V
Z,IS
V Z,IN V Z,IS R IN
IN
R bb
IS
Logic
V
V OUT
IS
IS
PROFET
R
V
R
IS
V
Z,VIS
VZ,IS = 68 V (typ.), RIS = 1 k nominal (or 1 k /n, if n devices are connected in parallel). IS = IL/kilis can be only driven by the internal circuit as long as Vout - VIS > 5V. If you want to measure load currents up to IL(M), RIS should be less than
Signal GND
Vbb - 5V . I L ( M ) / K ilis
Rbb = 200 typ., VZ,IN = VZ,IS = 68 V typ., RIS = 1 k nominal. Note that when overvoltage exceeds 73 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used.
Note: For large values of RIS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open.
Infineon Technologies AG
Page 7 of 13
2003-Oct-01
Data Sheet BTS 443 P
Reversave (Reverse battery protection) -Vbb
R bb
Version b:
V
bb IN
Vbb PROFET OUT
IN OUT
IS
R IN
Logic
Power Transistor
VZb
IS
RL D
Signal
R IS
RV
Power
Note that there is no reverse battery protection when using a diode without additional Z-diode VZL, VZb. Version c: Sometimes a necessary voltage clamp is given by non inductive loads RL connected to the same switch and eliminates the need of clamping circuit:
RV1k, R IS = 1 k nominal. Add RIN for reverse battery protection in applications with Vbb above 16V; 0.05 A, 1 1 1 recommended value: + + = RIN RIS RV | V | -12V
bb
To minimise power dissipation at reverse battery operation, the summarised current into the IN and IS pin should be about 50mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through RIS and RV. Since the current through Rbb generates additional heat in the device, this has to be taken into account in the overall thermal considerations.
V
bb IN
Vbb PROFET OUT
RL
IS
Vbb disconnect with energised inductive load
Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL < 73 V or VZb < 30 V if RIN=0). For higher clamp voltages currents at IN and IS have to be limited to 250 mA. Version a:
V bb IN
V
bb OUT
PROFET
IS
VZL
Infineon Technologies AG
Page 8 of 13
2003-Oct-01
Data Sheet BTS 443 P
Inductive load switch-off energy dissipation
E bb E AS V V bb ELoad bb i L(t) IN PROFET IS I IN ZL OUT L RL EL
Maximum allowable load inductance for a single switch off
L = f (IL ); Tj,start = 150C, Vbb = 12 V, RL = 0 L[mH]
100
{
10
RIS
ER
Energy stored in load inductance: EL = 1/2*L*I L While demagnetising load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, with an approximate solution for RL > 0 : EAS= IL* L (V + |VOUT(CL)|) 2*RL bb IL*RL
2
1
0.1
ln (1+ |V
OUT(CL)|
)
0.01 0 25 50 75 100
IL [A]
The device is not suitable for permanent PWM with inductive loads if active clamping occurs every cycle.
Infineon Technologies AG
Page 9 of 13
2003-Oct-01
Data Sheet BTS 443 P
Timing diagrams
Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2a: Switching motors and lamps:
IIN
IIN
VOUT
90% t on dV/dton 10% t off
dV/dtoff
VOUT
IL
tslc(IS)
t slc(IS)
IIL
Load 1
Load 2
IIS
IIS
tson(IS) t soff(IS) t t
The sense signal is not valid during a settling time after turn-on/off and after change of load current.
Sense current above IIS,fault can occur at very high inrush currents.
Figure 1b: typical behaviour of sense output:
Figure 2b: Switching an inductive load:
IS IIS,fault >= 2.5mA
IIN
VOUT
IL(lim) = 20A IL
IL
IIS
t
Infineon Technologies AG
Page 10 of 13
2003-Oct-01
Data Sheet BTS 443 P
Figure 3a: Short circuit:
IN
Figure 5a: Undervoltage restart of charge pump, overvoltage clamp
12
VOUT
10
I
VIN = 0
L
8
I L(SCp) I L(SCr)
V 6 dynamic, short Undervoltage not below VbIN(u)
ON(CL)
4
IIS
IISfault t
2
IIN = 0
VON(CL)
0 0 VbIN(u) 2 4 6 8 VbIN(ucp) 10
V12 bb
Figure 4a: Overtemperature Reset if TjIIN
IIS
IIS,fault
VOUT
Auto Restart
Tj
t
Infineon Technologies AG
Page 11 of 13
2003-Oct-01
Data Sheet BTS 443 P
Figure 6a: Current sense versus load current: Figure 7a: Output voltage drop versus load current:
[mA]
I IS
[V]
VON
0.1
R
ON
2.0
V ON(NL)
0.05
1.0
0 0 5 10 15
)
IL 20 [A]
0.0 0 1 2 3 4 5 6
IL 7 [A] 8
Figure 6b: Current sense ratio12 :
kILIS
8200
0
0 2.5 5 10 20
[A] IL
12
)
This range for the current sense ratio refers to all devices. The accuracy of the kILIS can be raised by means of calibration the value of kILIS for every single device.
Infineon Technologies AG
Page 12 of 13
2003-Oct-01
Data Sheet BTS 443 P
Package and Ordering Code
All dimensions in mm
D-Pak-5 Pin: TO-252-5-1
Sales Code Ordering code
6.5 +0.15 -0.10
BTS443P Q67060-S7404-A 2
2.3 +0.05 -0.10 B A 1 0.1 0...0.15 0.9 +0.08 -0.04
10.1
5.4 0.1
9.9 0.5 6.22 -0.2
0.8 0.15
(4.17)
0.15 max per side
0.51 min
5x0.6 0.1 1.14
0.5 +0.08 -0.04 0.1
4.56
0.25
M
AB
GPT09161
All metal surfaces tin plated, except area of cut.
Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Infineon Technologies AG
Page 13 of 13
2003-Oct-01

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